Part Number Hot Search : 
73M025H7 4013BE SZ110 A1142 SGP12A MPS2161 MMBT4354 10130
Product Description
Full Text Search
 

To Download NTE460 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 NTE460 Silicon P-Channel JFET Transistor AF Amp
Absolute Maximum Ratings: Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate-Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 10A, VDS = 0 IGSS VGS = 10V, VDS = 0 VGS = 10V, VDS = 0, TA = +150C ON Characteristics Zero-Gate-Voltage Drain Current Gate-Source Voltage Drain-Source Resistance Small-Signal Characteristics Forward Transfer Admittance |yfs| |yos| |yrs| |yis| Ciss NF VDS = 10V, ID = 2mA, f = 1kHz, Note 1 VDS = 10V, ID = 2mA, f = 10MHz, Note 1 Output Admittance Reverse Transfer Conductance Input Conductance Inpu Capacitance Functional Characteristics Noise Figure VDS = -5V, ID = 1mA, Rg = 1M, f = 1kHz - - 3.0 dB VDS = 10V, ID = 2mA, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 10V, VGS = 1V, f = 1MHz 1500 1350 - - - - - - - - - - 3000 mhos - 40 0.1 0.2 20 mhos mhos mhos mhos pF IDSS VGS rDS VDS = -10V, VGS = 0, Note 1 VDG = -15V, ID = 10A ID = 100A, VGS = 0 2.0 - - - - - 6.0 6.0 800 mA V 20 - - - - - - 10 10 V nA A Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: PulseWidth 630ms, Duty Cycle 10%.
.220 (5.58) Dia .185 (4.7) Dia
.190 (4.82)
.030 (.762)
.500 (12.7) Min
.018 (0.45) Dia Gate Source Drain
45 Case .040 (1.02)


▲Up To Search▲   

 
Price & Availability of NTE460

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X